1 motorola igbt device data
nchannel enhancement mode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. short circuit rated igbts are specifically suited for applications requiring a guaranteed short circuit withstand time. fast switching characteristics result in efficient operations at high frequencies. copackaged igbts save space, reduce assembly time and cost. ? high power surface mount d3pak package ? high speed e off : 160 j/a typical at 125 c ? high short circuit capability 10 s minimum ? soft recovery free wheeling diode is included in the package ? robust high voltage termination maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 1200 vdc collectorgate voltage (r ge = 1.0 m w ) v cgr 1200 vdc gateemitter voltage e continuous v ge 20 vdc collector current e continuous @ t c = 25 c e continuous @ t c = 90 c e repetitive pulsed current (1) i c25 i c90 i cm 20 12 40 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 123 0.98 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circuit withstand time (v cc = 720 vdc, v ge = 15 vdc, t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to case diode e junction to ambient r q jc r q jc r q ja 1.02 1.41 45 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c (1) pulse width is limited by maximum junction temperature. this document contains information on a new product. specifications and information are subject to change without notice. order this document by MGV12N120D/d semiconductor technical data
igbt & diode in d3pak 12 a @ 90 c 20 a @ 25 c 1200 volts short circuit rated case 43301, style 1 to268aa g c e c e g ? motorola, inc. 1995
2 motorola igbt device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (v ge = 0 vdc, i c = 250 m adc) temperature coefficient (positive) b vces 1200 e e 870 e e vdc mv/ c zero gate voltage collector current (v ce = 1200 vdc, v ge = 0 vdc) (v ce = 1200 vdc, v ge = 0 vdc, t j = 125 c) i ces e e e e 100 2500 m adc gatebody leakage current (v ge = 20 vdc, v ce = 0 vdc) i ges e e 250 nadc on characteristics (1) collectortoemitter onstate voltage (v ge = 15 vdc, i c = 5 adc) (v ge = 15 vdc, i c = 10 adc, t j = 125 c) (v ge = 15 vdc, i c = 10 adc) v ce(on) e e e 2.51 2.36 3.21 3.37 e 4.42 vdc gate threshold voltage (v ce = v ge , i c = 1 madc) threshold temperature coefficient (negative) v ge(th) 4.0 e 6.0 10 8.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 10 adc) g fe e 12 e mhos dynamic characteristics input capacitance (v 25 vdc v 0 vdc c ies e 930 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 126 e transfer capacitance f = 1 . 0 mhz) c res e 16 e switching characteristics (1) turnon delay time (v cc = 720 vdc i c =10adc t d(on) e 80 e ns rise time (v cc = 720 vd c, i c = 10 ad c, v ge = 15 vdc, l = 300 h t r e 114 e turnoff delay time ge , r g = 20 w, t j = 25 c) energy losses include a tail o t d(off) e 66 e fall time energy losses include atailo t f e 232 e turnoff switching loss e off e 0.57 1.33 mj turnon switching loss e on e 1.12 1.88 total switching loss e ts e 1.69 3.21 turnon delay time (v cc = 720 vdc i c =10adc t d(on) e 74 e ns rise time (v cc = 720 vd c, i c = 10 ad c, v ge = 15 vdc, l = 300 h t r e 110 e turnoff delay time ge , r g = 20 w, t j = 125 c) energy losses include a tail o t d(off) e 80 e fall time energy losses include atailo t f e 616 e turnoff switching loss e off e 1.60 e mj turnon switching loss e on e 2.30 e total switching loss e ts e 3.90 e gate charge (v 720 vdc i 10 adc q t e 31 e nc (v cc = 720 vdc, i c = 10 adc, v ge = 15 vdc ) q 1 e 13 e v ge = 15 vdc) q 2 e 14 e
3 motorola igbt device data electrical characteristics e continued (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit diode characteristics diode forward voltage drop (i ec = 5 adc) (i ec = 5 adc, t j = 125 c) (i ec = 10 adc) v fec e e e 2.75 2.50 3.50 3.22 e 4.18 vdc reverse recovery time (i 10 ad v 720 vd t rr e 54 e ns (i f = 10 adc, v r = 720 vdc, t a e 30 e ( f , r , di f /dt = 200 a/ m s) t b e 24 e reverse recovery stored charge q rr e 61 e m c reverse recovery time (i 10 ad v 720 vd t rr e 150 e ns (i f = 10 adc, v r = 720 vdc, t a e 102 e ( f , r , di f /dt = 200 a/ m s, t j = 125 c) t b e 48 e reverse recovery stored charge q rr e 653 e m c (1) pulse test: pulse width 300 m s, duty cycle 2%.
4 motorola igbt device data package dimensions dim a min max min max millimeters 0.588 0.592 14.94 15.04 inches b 0.623 0.627 15.82 15.93 c 0.196 0.200 4.98 5.08 d 0.048 0.052 1.22 1.32 e 0.058 0.062 1.47 1.57 f 0.078 0.082 1.98 2.08 g 0.430 bsc 1.092 bsc h 0.105 0.110 2.67 2.79 j 0.018 0.022 0.46 0.56 k 0.150 0.160 3.81 4.06 l 0.058 0.062 1.47 1.57 n 0.353 0.357 8.97 9.07 p 0.078 0.082 1.98 2.08 q 0.053 0.057 1.35 1.45 r 0.623 0.627 15.82 15.93 s 0.313 0.317 7.95 8.05 u 0.028 0.032 0.71 0.81 v 0.050 1.27 w 0.054 0.058 1.37 1.47 x 0.050 0.060 1.27 1.52 y 0.104 0.108 2.64 2.74 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. base 2. collector 3. emitter 4. collector case 43301 issue b w y v p u f k n q b s d g 2 4 13 a 2 pl 2 pl l m 0.13 (0.005) t seating j h x e c plane t r how to reach us: usa / europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmfax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok r oad, tai po, n.t., hong kong. 85226629298 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters can and do vary in different applications. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. MGV12N120D/d
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